Fabrication of Buried Co-Planar Metal-Insulator-Metal Nanojunctions with a Gap Lower than 10 nm
نویسندگان
چکیده
An improvement of a process to fabricate co-planar metal-insulator-metal nanojunctions is presented to reach a gap length much lower than lo nm using a 20 kev e-beam and an AuPd lift-off. The electrodes of the nanojunction are less than loo nm in width and are buried in the Si02 substrate. For the 8 nm nanojunctions, the gap is still filled with Si02 if care is taken about the Si02
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